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  研究基底界面吸附層的結(jié)構(gòu)對于深入理解納米材料界面的物理化學(xué)行為具有重要意義。為光電材料和納米芯片等功能性薄膜的開發(fā)提供了新的視角。研究發(fā)現(xiàn)聚苯乙烯（PS）在二氧化硅基底上的吸附層具有兩種不同的結(jié)構(gòu)，內(nèi)層為Flattened吸附層，外層為loosely吸附層。聚合物鏈在基底表面的吸附過程中，首先在內(nèi)層形成Flattened吸附鏈（Flattened adsorbed layer），隨后聚合物鏈在界面剩余空位上吸附形成較為松散的loosely吸附鏈（loosely adsorbed layer）。然而，當(dāng)聚合物與固體基底間存在較強(qiáng)的相互作用時(shí)，理解Flattened吸附鏈在固體基底上的演變機(jī)制仍然面臨挑戰(zhàn)。因此，深入探究強(qiáng)相互作用下的吸附鏈結(jié)構(gòu)演變，對于推動(dòng)納米材料科學(xué)的進(jìn)步具有重要的科學(xué)意義和研究價(jià)值。

-Si基底上PS Flattened吸附層的厚度及密度。隨著改性基底表面苯基含量的增加，F(xiàn)lattened層達(dá)到吸附平衡所需的熱處理時(shí)間（

Figure 1. (a) Thicknesses of the PS (M_w = 225 kDa) flattened layers (h_flat) on PTS-75, PTS-85, and PTS-96 against the annealing time at 423 K. (b) The thickness h_flat on PTS-96 against the annealing time at 423 K for PS with various molecular weights. (c) Density of the PS (M_w = 225 kDa) flattened layer on quartz crystals with ～96% phenyl content as a function of annealing time at 423 K obtained from QCM data.

和密度的增加主要是由于吸附鏈在垂直于基底方向的堆積密度增加。此外，改性基底表面苯基含量升高以及PS分子量增大均會(huì)抑制PS吸附鏈的運(yùn)動(dòng)能力，導(dǎo)致

Figure 2. (a) Normalized ssp SFG spectra of the dPS/PTS-96 interface annealed at 423 K for the indicated annealing times. Spectra are offset for clarity. The black solid lines are the fitted curves. (b) Plots of the ratio of the peak area of the π-π stacking bond to that of the stretching band of the C-D bond on the benzene ring at 2288 cm^-1 vs the annealing time. The wavenumber of the peak of π-πstacking () against the annealing time is shown in the inset. (c) Schematic illustration showing the evolution of the conformation of the flattened chains during the annealing process.

  論文鏈接：https://pubs.acs.org/doi/full/10.1021/acsmacrolett.4c00470

  課題組網(wǎng)頁：https://www.chem.zstu.edu.cn/gfzclbjmsys.htm